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Vol.E78-C No.9
pp.1153-1153
FOREWORD
FOREWORD
Kazuhito FURUYA, |
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Vol.E78-C No.9
pp.1154-1164
INVITED PAPER
Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
Tohru NAKAMURA, Takeo SHIBA, Takahiro ONAI, Takashi UCHINO, Yukihiro KIYOTA, Katsuyoshi WASHIO, Noriyuki HOMMA, |
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Vol.E78-C No.9
pp.1165-1170
INVITED PAPER
High Speed GaAs Digital Integrated Circuits
Masahiro AKIYAMA, Seiji NISHI, Yasushi KAWAKAMI, |
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Vol.E78-C No.9
pp.1171-1181
INVITED PAPER
Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
Kenji KURISHIMA, Hiroki NAKAJIMA, Shoji YAMAHATA, Takashi KOBAYASHI, Yutaka MATSUOKA, |
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Vol.E78-C No.9
pp.1182-1188
Special SectionPAPER
Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
Eiichi SANO, Yutaka MATSUOKA, Tadao ISHIBASHI, |
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Vol.E78-C No.9
pp.1189-1194
Special SectionPAPER
A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
Masami TOKUMITSU, Kazumi NISHIMURA, Makoto HIRANO, Kimiyoshi YAMASAKI, |
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Vol.E78-C No.9
pp.1195-1202
Special SectionPAPER
Low Power Dissipation GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSIs
Norio HIGASHISAKA, Masaaki SHIMADA, Akira OHTA, Kenji HOSOGI, Kazuo KUBO, Noriyuki TANINO, |
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Vol.E78-C No.9
pp.1203-1209
Special SectionPAPER
A 15-Gbit/s Si-Bipolar Gate Array
Ryuusuke KAWANO, Minoru TOGASHI, Chikara YAMAGUCHI, Yoshiji KOBAYASHI, Masao SUZUKI, |
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Vol.E78-C No.9
pp.1210-1215
Special SectionPAPER
Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
Kazuhiko NAKAHARA, Yasushi ITOH, Yoshie HORIIE, Takeshi SAKURA, Naohito YOSHIDA, Takayuki KATOH, Tadashi TAKAGI, Yasuo MITSUI, Yasuyuki ITO, |
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Vol.E78-C No.9
pp.1216-1222
Special SectionPAPER
60-GHz HEMT-Based MMIC One-Chip Receiver
Tamio SAITO, Norio HIDAKA, Yoji OHASHI, Kazuo SHIRAKAWA, Yoshihiro KAWASAKI, Toshihiro SHIMURA, Hideyuki OIKAWA, Yoshio AOKI, |
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