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Vol.E83-C No.8
pp.1242-1246
Special SectionPAPER
Device Modeling and Simulation
Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
Andreas SCHOLZE, Andreas SCHENK, Wolfgang FICHTNER, |
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Vol.E83-C No.8
pp.1247-1252
Special SectionPAPER
Process Modeling and Simulation
Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage
Masami HANE, Takeo IKEZAWA, Akio FURUKAWA, |
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Vol.E83-C No.8
pp.1253-1258
Special SectionPAPER
Process Modeling and Simulation
Atomic Scale Simulation of Extended Defects: Monte Carlo Approach
Jaehee LEE, Taeyoung WON, |
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Vol.E83-C No.8
pp.1259-1266
Special SectionPAPER
Process Modeling and Simulation
A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Alexander BURENKOV, Klaus TIETZEL, Andreas HOSSINGER, Jurgen LORENZ, Heiner RYSSEL, Siegfried SELBERHERR, |
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Vol.E83-C No.8
pp.1267-1274
Special SectionPAPER
Process Modeling and Simulation
3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon
Vincent SENEZ, Jerome HERBAUX, Thomas HOFFMANN, Evelyne LAMPIN, |
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Vol.E83-C No.8
pp.1275-1280
INVITED PAPER
Simulation Methodology and Environment
Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry
Boon-Khim LIEW, Chih-Chiang WANG, Carlos H. DIAZ, Shien-Yang WU, Jack Yuan-Chen SUN, Yai-Fen LIN, Di-Son KUO, Hua-Tai LIN, Anthony YEN, |
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Vol.E83-C No.8
pp.1281-1287
INVITED PAPER
Simulation Methodology and Environment
Advanced Process/Device Modeling and Its Impact on the CMOS Design Solution
Shigetaka KUMASHIRO, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1288-1294
Special SectionPAPER
Simulation Methodology and Environment
Systematic Yield Simulation Methodology Applied to Fully-Depleted SOI MOSFET Process
Noriyuki MIURA, Hirokazu HAYASHI, Koichi FUKUDA, Kenji NISHI, |
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Vol.E83-C No.8
pp.1295-1302
Special SectionPAPER
Simulation Methodology and Environment
Delay Library Generation with High Efficiency and Accuracy on the Basis of RSM
Hisako SATO, Yuko ITO, Hisaaki KUNITOMO, Hiroyuki BABA, Satoru ISOMURA, Hiroo MASUDA, |
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Vol.E83-C No.8
pp.1303-1310
Special SectionPAPER
Simulation Methodology and Environment
Practical Inverse Modeling with SIESTA
Rudolf STRASSER, Siegfried SELBERHERR, |
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Summary | Full Text:PDF | |
| Current List: 32931 - 32940
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