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Vol.E83-C No.8
pp.1175-1182
Special SectionPAPER
Gate Tunneling Simulation
Modeling and Simulation of Tunneling Current in MOS Devices Including Quantum Mechanical Effects
Andrea GHETTI, Jeff BUDE, Paul SILVERMAN, Amal HAMAD, Hem VAIDYA, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1183-1188
Special SectionPAPER
Gate Tunneling Simulation
Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE
Lucia SCOZZOLI, Susanna REGGIANI, Massimo RUDAN, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1189-1193
Special SectionPAPER
Gate Tunneling Simulation
Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
Andreas WETTSTEIN, Andreas SCHENK, Wolfgang FICHTNER, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1194-1202
Special SectionPAPER
Gate Tunneling Simulation
Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs
Eric CASSAN, Sylvie GALDIN, Philippe DOLLFUS, Patrice HESTO, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1203-1211
INVITED PAPER
Device Modeling and Simulation
Increasing Importance of Electronic Thermal Noise in Sub-0.1 µm Si-MOSFETs
Nobuyuki SANO, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1212-1217
Special SectionPAPER
Device Modeling and Simulation
Monte Carlo Simulation of Sub-0.1µm Devices with Schottky Contact Model
Kazuya MATSUZAWA, Ken UCHIDA, Akira NISHIYAMA, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1218-1223
Special SectionPAPER
Device Modeling and Simulation
A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers
Mihail NEDJALKOV, Hans KOSINA, Siegfried SELBERHERR, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1224-1227
Special SectionPAPER
Device Modeling and Simulation
RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
Scott ROY, Sava KAYA, Asen ASENOV, John R. BARKER, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1228-1234
Special SectionPAPER
Device Modeling and Simulation
Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile
Christoph JUNGEMANN, Stefan KEITH, Bernd MEINERZHAGEN, |
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Summary | Full Text:PDF | |
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Vol.E83-C No.8
pp.1235-1241
Special SectionPAPER
Device Modeling and Simulation
Simulation of Multi-Band Quantum Transport Reflecting Realistic Band Structure
Matsuto OGAWA, Takashi SUGANO, Ryuichiro TOMINAGA, Tanroku MIYOSHI, |
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Summary | Full Text:PDF | |
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Current List: 32921 - 32930
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