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IEICE Trans

Keyword : worst-case sampling

Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method
Sangheon OH Changhwan SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5 ; pp. 541-543
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
random variation, FinFET, SRAM, worst-case sampling, 
 Summary | Full Text:PDF