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IEICE Trans

Keyword : trench-gate MOSFET compact model

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Takahiro IIZUKA Kenji FUKUSHIMA Akihiro TANAKA Hideyuki KIKUCHIHARA Masataka MIYAKE Hans J. MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 744-751
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFET, LDMOS, HiSIM, trench-gate MOSFET compact model, 
 Summary | Full Text:PDF