Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Takahiro IIZUKA  Kenji FUKUSHIMA  Akihiro TANAKA  Hideyuki KIKUCHIHARA  Masataka MIYAKE  Hans J. MATTAUSCH  Mitiko MIURA-MATTAUSCH  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.5   pp.744-751
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.744
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFET,  LDMOS,  HiSIM,  trench-gate MOSFET compact model,  

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Summary: 
The trench-gate type high-voltage (HV) MOSFET is one of the variants of HV-MOSFET, typically with its utility segments lying on a larger power consumption domain, compared to planar HV-MOSFETs. In this work, the HiSIM_HV compact model, originally intended for planar LDMOSFETs, was adequately extended to accommodate trench-gate type HV-MOSFETs. The model formulation focuses on a closed-form description of the current path in the highly resistive drift region, specific to the trench-gate HV-MOSFETs. It is verified that the developed compact expression can capture the conductivity in the drift region, which varies with voltage bias and device technology such as trench width. The notable enhancement of current drivability can be accounted for by the electrostatic control exerted by the trench gate within the framework of this model.