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IEICE Trans

Keyword : subquarter-micron pMOS

Capacitance-Voltage Characteristics of Buried-Channel MOS Capacitors with a Structure of Subquarter-Micron pMOS
Masayasu MIYAKE Yukio OKAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/03/25
Vol. E79-C  No. 3 ; pp. 430-436
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
C-V characteristics, buried-channel MOS capacitor, subquarter-micron pMOS, doping profile, thin gate oxide, 
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