Keyword : doping profile


Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices
Seongjae CHO Jang-Gn YUN Il Han PARK Jung Hoon LEE Jong Pil KIM Jong-Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 988-993
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
3-D devicesvertical ion implantationdoping profileconcentration peakdoping gradient
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Capacitance-Voltage Characteristics of Buried-Channel MOS Capacitors with a Structure of Subquarter-Micron pMOS
Masayasu MIYAKE Yukio OKAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/03/25
Vol. E79-C  No. 3 ; pp. 430-436
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
C-V characteristicsburied-channel MOS capacitorsubquarter-micron pMOSdoping profilethin gate oxide
 Summary | Full Text:PDF