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IEICE Trans

Keyword : recrystallization

A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI Tetsu FUKANO Atsushi FUKURODA Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1453-1458
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOI, lateral bipolar, sidewall self-aligning base, BiCMOS, recrystallization, 
 Summary | Full Text:PDF