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IEICE Trans

Keyword : program/erase speed

Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer
Sang-Youl LEE Seung-Dong YANG Jae-Sub OH Ho-Jin YUN Kwang-Seok JEONG Yu-Mi KIM Hi-Deok LEE Ga-Won LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 831-836
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SOHOS, high-k, gate-all-around, program/erase speed, flash memory, 
 Summary | Full Text:PDF