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IEICE Trans

Keyword : poly-Si TFT

Back- and Front-Interface Trap Densities Evaluation and Stress Effect of Poly-Si TFT
Kenichi TAKATORI Hideki ASADA Setsuo KANEKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/10/01
Vol. E91-C  No. 10 ; pp. 1564-1569
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
interface trap density, poly-Si TFT, stress effect, threshold-voltage method, 
 Summary | Full Text:PDF
New Poly-Si TFT with Selectively Doped Region in the Active Layer
Min-Cheol LEE Jae-Hong JEON Juhn-Suk YOO Min-Koo HAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/10/25
Vol. E83-C  No. 10 ; pp. 1575-1578
Type of Manuscript:  Special Section PAPER (Special Issue on Electronic Displays)
Category: 
Keyword: 
poly-Si TFT, selectively doped region, leakage current, on-current, 
 Summary | Full Text:PDF