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IEICE Trans

Keyword : multigate MOSFET

Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations
Toshiro HIRAMOTO Toshiharu NAGUMO Tetsu OHTOU Kouki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 836-841
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: 
Keyword: 
SOI, body factor, body effect, FinFET, multigate MOSFET, 
 Summary | Full Text:PDF