Toshiharu NAGUMO


Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations
Toshiro HIRAMOTO Toshiharu NAGUMO Tetsu OHTOU Kouki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 836-841
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: 
Keyword: 
SOIbody factorbody effectFinFETmultigate MOSFET
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Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs
Toshiki SAITO Takuya SARAYA Takashi INUKAI Hideaki MAJIMA Toshiharu NAGUMO Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1073-1078
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
SOI MOSFETtriangular wireshort channel effectsubthreshold factorDIBL
 Summary | Full Text:PDF