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| Keyword : memory-cell leakage current
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Plate Bumping Leakage Current Measurement Method and Its Application to Data Retention Characteristic Analysis for RJB DRAM Cells
Toru IWATA Hiroyuki YAMAUCHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/25
Vol. E79-C
No. 12 ;
pp. 1707-1712
Type of Manuscript:
Special Section PAPER (Special Issue on Low-Power LSI Technologies)
Category:
Keyword:
DRAM, data retention, memory-cell leakage current, | | | Summary | Full Text:PDF | |
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