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IEICE Trans

Keyword : logic-in-memory structure

Multiple-Valued Logic-in-Memory VLSI Architecture Based on Floating-Gate-MOS Pass-Transistor Logic
Takahiro HANYU Michitaka KAMEYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/09/25
Vol. E82-C  No. 9 ; pp. 1662-1668
Type of Manuscript:  Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Non-Binary Architectures
Keyword: 
pass-transistor network, floating-gate MOS transistor, logic-in-memory structure, Manhattan distance, flash EEPROM technology, four-valued full adder, 
 Summary | Full Text:PDF