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IEICE Trans

Keyword : insulated gate

Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer
Yong-Gui XIE Seiya KASAI Hiroshi TAKAHASHI Chao JIANG Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1335-1343
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
insulated gate, PHEMT, InGaAs, interface control, Fermi level pinning, 
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