Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/06/01 Vol. E84-CNo. 6 ;
pp. 763-770 Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories) Category: FeRAMs Keyword: DRAM, ferroelectric memory, high speed, low-power, high-endurance,
Preparation of Ferroelectric Sr0. 7Bi2. 3Ta2O9 Thin Films by Misted Deposition Method Using Alkoxide Solution Ichiro KOIWAYukihisa OKADAJuro MITA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/25 Vol. E81-CNo. 4 ;
pp. 590-594 Type of Manuscript: Special Section LETTER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: ferroelectric memory, SrBi2Ta2O9 thin film, misted deposition method, alkoxide solution,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/25 Vol. E81-CNo. 4 ;
pp. 552-559 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: ferroelectric memory, SrBi2Ta2O9 thin film, crystallization process, alkoxide precursor,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/25 Vol. E79-CNo. 2 ;
pp. 234-242 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: ferroelectric memory, DRAM, half-V cc plate, nonvolatile memory,