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IEICE Trans

Keyword : device linearity

Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Design
Feng-Tso CHIEN Hsien-Chin CHIU Shih-Cheng YANG Chii-Wen CHEN Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1306-1311
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
doped-channel EFTs, Al0.3Ga0.7As/In0.15Ga0.85As, device linearity, 
 Summary | Full Text:PDF