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IEICE Trans

Keyword : depth profile

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation
Akira HEYA Naoto MATSUO Kazuhiro KANDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/04/01
Vol. E99-C  No. 4 ; pp. 474-480
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
boron dopant, low-temperature activation, soft X-ray irradiation, sheet resistance, electron excitation, depth profile, 
 Summary | Full Text:PDF