Akira HEYA


Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation
Akira HEYA Naoto MATSUO Kazuhiro KANDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/04/01
Vol. E99-C  No. 4  pp. 474-480
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
boron dopantlow-temperature activationsoft X-ray irradiationsheet resistanceelectron excitationdepth profile
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Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film
Takahiro KOBAYASHI Naoto MATSUO Akira HEYA Shin YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C  No. 11  pp. 1112-1116
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
TFTSiNX filmfixed chargehump phenomenon
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Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing
Akira HEYA Naoto MATSUO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Vol. E93-C  No. 10  pp. 1516-1517
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
pentaceneorganic thin-film transistorsatomic hydrogen annealingcrystal orientationcarrier mobility
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