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IEICE Trans

Keyword : capless HEMTs

Fabrication and Characterization of Capless In0.52Al0.48As/In0.53Ga0.47As HEMTs
Jae-Hyung JANG Ilesanmi ADESIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/08/01
Vol. E89-C  No. 8 ; pp. 1259-1262
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
InGaAs, InP, capless HEMTs, 
 Summary | Full Text:PDF