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IEICE Trans

Keyword : SOI MOSFETs

Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach
Tsukasa OOOKA Hideyuki IWATA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 417-422
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOI MOSFETs, numerical simulation, temperature dependence, single event upset, soft errors, 
 Summary | Full Text:PDF