The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC Kiyoyuki IHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/03/01 Vol. E91-CNo. 3 ;
pp. 366-372 Type of Manuscript: PAPER Category: Microwaves, Millimeter-Waves Keyword: IQ modulator, temperature dependence, EVM, direct conversion, GaAs, pHEMT,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/06/01 Vol. E88-CNo. 6 ;
pp. 1142-1147 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: Building Block Keyword: CMOS, reference, subthreshold, weak inversion, low power, temperature dependence,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/11/01 Vol. E87-CNo. 11 ;
pp. 1910-1914 Type of Manuscript: Special Section PAPER (Special Section on New System Paradigms for Integrated Electronics) Category: Keyword: CMOS, subthreshold current, ultra-low-power, temperature dependence,
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1994/11/25 Vol. E77-ANo. 11 ;
pp. 1954-1956 Type of Manuscript: Special Section LETTER (Special Section of Letters Selected from the 1994 IEICE Spring Conference) Category: Keyword: super–conductive electronics, Andreev reflection, excess current, temperature dependence, Arnold theory,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/06/25 Vol. E77-CNo. 6 ;
pp. 888-893 Type of Manuscript: Special Section PAPER (Special Issue on Measurement Techniques for Microwave/Millimeter Wave) Category: Keyword: dielectric rod resonator, dielectric material, temperature dependence, measurement,