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High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-Channel FETs Hsien-Chin CHIU Shih-Cheng YANG Yi-Jen CHAN Hao-Hsiung LIN | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10 ;
pp. 1312-1317
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits Keyword: DCFET, InGaP, power, performance, RIE, | | | Summary | Full Text:PDF | |
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