For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-Channel FETs
Hsien-Chin CHIU Shih-Cheng YANG Yi-Jen CHAN Hao-Hsiung LIN
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
DCFET, InGaP, power, performance, RIE,
Full Text: PDF>>
A high barrier Schottky gate on InGaP/InGaAs doped-channel FETs (DCFETs) provides a high current density, high gate-to-drain breakdown voltage and a better linear operation over a wide gate bias range. However, these doped-channel devices are limited by a large parasitic resistance associated with a 20 nm thick undoped InGaP layer beneath the gate metal. In this study, we inserted a Si δ-doped layer inside this high bandgap undoped InGaP layer to reduce parasitic resistances and to enhance device DC and RF power performance. These modified DCFETs (M-DCFETs) demonstrated an output power density of 204 mW/mm, a power-added efficiency of 45%, and a linear power gain of 18.3 dB for an 1 mm gate-width device under a 2.4 GHz operation. These characteristics suggest that doped-channel FETs with a Si δ-doped layer provide a good potential for high power microwave device applications.