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IEICE Trans

Keyword : MOS memory

Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots
Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 709-712
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Nanomaterials and Quantum-Effect Devices
Keyword: 
silicon quantum dot, MOS memory, floating gate, Coulomb blockade, 
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