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IEICE Trans

Keyword : Gallium Nitride

DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1348-1353
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium Nitride, Schottky diode, varactor, multiplier, 
 Summary | Full Text:PDF
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz
Stephan MAROLDT Dirk WIEGNER Stanislav VITANOV Vassil PALANKOVSKI Rudiger QUAY Oliver AMBACHER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1238-1244
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
Gallium Nitride, power amplifier, switch-mode, efficiency, 
 Summary | Full Text:PDF
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy
Andrea CORRION Christiane POBLENZ Patrick WALTEREIT Tomas PALACIOS Siddharth RAJAN Umesh K. MISHRA Jim S. SPECK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 906-912
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
MBE, Gallium Nitride, HEMT, microwave, MBE, 
 Summary | Full Text:PDF