Dimitris PAVLIDIS

DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1348-1353
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium Nitride, Schottky diode, varactor, multiplier, 
 Summary | Full Text:PDF
Prospective for Gallium Nitride-Based Optical Waveguide Modulators
Arnaud STOLZ Laurence CONSIDINE Elhadj DOGHECHE Didier DECOSTER Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1363-1368
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium-nitride, electro-optic, optical waveguide, optoelectronics, 
 Summary | Full Text:PDF
High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE Noriaki KOGUSHI Kian Siong ANG René HOFSTETTER Kumar MANOJ Louis Nicholas RETNAM Hong WANG Geok Ing NG Chon JIN Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1354-1362
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Seebeck effect, heterostructure-thermopile, AlGaAs/InGaAs, AlGaN/GaN, HEMT, FPA, infrared image sensor, 
 Summary | Full Text:PDF
Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlN, AlN/GaN MISFET, AlN/GaN HFET, wide-bandgap, frequency-dispersion, 
 Summary | Full Text:PDF
Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements
Jochen SIGMUND Jean-Francois LAMPIN Valentin IVANNIKOV Cezary SYDLO Michail FEIGINOV Dimitris PAVLIDIS Peter MEISSNER Hans L. HARTNAGEL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1058-1062
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Sb-based Devices
Keyword: 
LTG-GaAsSb, THz, 
 Summary | Full Text:PDF
AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
Sanghyun SEO Kaustav GHOSE Guang Yuan ZHAO Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 994-1000
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlN, MISFETs, HFETs, Drift-diffusion simulations, 
 Summary | Full Text:PDF
Improvement of CO Sensitivity in GaN-Based Gas Sensors
Eunjung CHO Dimitris PAVLIDIS Guangyuan ZHAO Seth M. HUBBARD Johannes SCHWANK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1047-1051
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaN, gas sensor, Pt Schottky diode, CO, 
 Summary | Full Text:PDF
Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Oktay YILMAZOGLU Kabula MUTAMBA Dimitris PAVLIDIS Marie Rose MBARGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1037-1041
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaN, pressure sensor, HEMT, Schottky diode, 
 Summary | Full Text:PDF
First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs
Xin ZHU Dimitris PAVLIDIS Guangyuan ZHAO Philippe BOVE Hacene LAHRECHE Robert LANGER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2010-2014
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
DHBT, heterojunction, InP, GaAsSb, 
 Summary | Full Text:PDF
A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
Guangyuan ZHAO William SUTTON Dimitris PAVLIDIS Edwin L. PINER Johannes SCHWANK Seth HUBBARD 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2027-2031
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN, gas sensor, Schottky diode, sensitivity, 
 Summary | Full Text:PDF
GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
Egor ALEKSEEV Dimitris PAVLIDIS William Earl SUTTON Edwin PINER Joan REDWING 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1462-1469
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaN, THz, Gunn, NDR, 
 Summary | Full Text:PDF