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Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)
Shun-ichiro OHMI Go YAMANAKA Tetsushi SAKAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C
No. 1 ;
pp. 24-29
Type of Manuscript:
Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category:
Keyword:
high-κ, AlON, ECR, sputtering, oxidation, | | | Summary | Full Text:PDF | |
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Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film
Tamotsu HASHIZUME Ryuusuke NAKASAKI Shin-ya OOTOMO Susumu OYAMA Hideki HASEGAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10 ;
pp. 1455-1461
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword:
GaN, passivation, surface, SiNx, ECR, | | | Summary | Full Text:PDF | |
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