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IEICE Trans

Keyword : Device modeling

Millimeter-Wave GaN HEMT for Power Amplifier Applications
Kazukiyo JOSHIN Kozo MAKIYAMA Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Yoshitaka NIIDA Masaru SATO Satoshi MASUDA Keiji WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10 ; pp. 923-929
Type of Manuscript:  INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
GaN HEMT, Millimeter-wave, Power amplifier, Device modeling, 
 Summary | Full Text:PDF