Millimeter-Wave GaN HEMT for Power Amplifier Applications

Kazukiyo JOSHIN  Kozo MAKIYAMA  Shiro OZAKI  Toshihiro OHKI  Naoya OKAMOTO  Yoshitaka NIIDA  Masaru SATO  Satoshi MASUDA  Keiji WATANABE  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E97-C   No.10   pp.923-929
Publication Date: 2014/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.923
Type of Manuscript: INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
GaN HEMT,  Millimeter-wave,  Power amplifier,  Device modeling,  

Full Text: FreePDF


Summary: 
Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency fT of 113 GHz and maximum oscillation frequency fmax of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.