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IEICE Trans

Keyword : 1T2C

Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell
Satoru OGASAWARA Sung-Min YOON Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 771-776
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric-gate FET, retention, 1T2C, memory window, threshold voltage, 
 Summary | Full Text:PDF