Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C
No. 6 ;
pp. 771-776
Type of Manuscript:
Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword:
ferroelectric-gate FET, retention, 1T2C, memory window, threshold voltage, |
