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IEICE Trans

Keyword : geometric parameter

High-Frequency Device-Modeling Techniques for RF-CMOS Circuits
Ryuichi FUJIMOTO Osamu WATANABE Fumie FUJII Hideyuki KAWAKITA Hiroshi TANIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A  No. 2 ; pp. 520-528
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
device model, model parameter, scaling, geometric parameter, process parameter, 
 Summary | Full Text:PDF