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High-Frequency Device-Modeling Techniques for RF-CMOS Circuits
Ryuichi FUJIMOTO Osamu WATANABE Fumie FUJII Hideyuki KAWAKITA Hiroshi TANIMOTO
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
device model, model parameter, scaling, geometric parameter, process parameter,
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Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance parameter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequacy of the proposed device-modeling techniques.