High-Frequency Device-Modeling Techniques for RF-CMOS Circuits

Ryuichi FUJIMOTO  Osamu WATANABE  Fumie FUJII  Hideyuki KAWAKITA  Hiroshi TANIMOTO  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E84-A   No.2   pp.520-528
Publication Date: 2001/02/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
device model,  model parameter,  scaling,  geometric parameter,  process parameter,  

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Summary: 
Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance parameter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequacy of the proposed device-modeling techniques.