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IEICE Trans

Yasushi MASAHIRO

PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
Shun-ichiro OHMI Yuya TSUKAMOTO Weiguang ZUO Yasushi MASAHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2018/05/01
Vol. E101-C  No. 5  pp. 311-316
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PdEr-alloy target, silicide, schottky barrier height, contact resistivity, RF magnetron sputtering, 
 Summary | Full Text:PDF
PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures
Shun-ichiro OHMI Mengyi CHEN Weiguang ZUO Yasushi MASAHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 458-462
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PdYb-silicide, contact resistivity, Schottky barrier height, stacked layer, RF magnetron sputtering, 
 Summary | Full Text:PDF
PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity
Shun-ichiro OHMI Mengyi CHEN Xiaopeng WU Yasushi MASAHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 510-515
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PtHf-alloy target, PtHf-alloy silicide, contact resistivity, Schottky barrier height, RF magnetron sputtering, 
 Summary | Full Text:PDF