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IEICE Trans

Yasuhiro OKADA

Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications
Takeshi MIZOGUCHI Toshiyuki NAKA Yuta TANIMOTO Yasuhiro OKADA Wataru SAITO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2017/03/01
Vol. E100-C  No. 3  pp. 321-328
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
power, GaN-HEMTs, HiSIM, field plate, capacitance, 
 Summary | Full Text:PDF