Yasuhiro OKADA


Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications
Takeshi MIZOGUCHI Toshiyuki NAKA Yuta TANIMOTO Yasuhiro OKADA Wataru SAITO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH 
Publication:   
Publication Date: 2017/03/01
Vol. E100-C  No. 3  pp. 321-328
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
powerGaN-HEMTsHiSIMfield platecapacitance
 Summary | Full Text:PDF