Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5
pp. 962-967
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: HfSiOxNy, metal gate, leakage current, charge trapping, TDDB, |