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IEICE Trans

Toshihiko KASAI

Multiple Programming Method and Circuitry for a Phase Change Nonvolatile Random Access Memory (PRAM)
Masashi TAKATA Kazuya NAKAYAMA Toshihiko KASAI Akio KITAGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1679-1685
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Phase Change RAM
Keyword: 
multi-bit, phase change, NVRAM, OUM, 
 Summary | Full Text:PDF