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IEICE Trans

Takashi SHIOTA

High-Speed EA-DFB Laser for 40-G and 100-Gbps
Shigeki MAKINO Kazunori SHINODA Takeshi KITATANI Hiroaki HAYASHI Takashi SHIOTA Shigehisa TANAKA Masahiro AOKI Noriko SASADA Kazuhiko NAOE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/07/01
Vol. E92-C  No. 7  pp. 937-941
Type of Manuscript:  INVITED PAPER (Special Section on Recent Advances in Ultra-high-speed Photonic Devices for Next-generation Optical Fiber Communications)
Category: 
Keyword: 
electro absorption modulator, EA, DFB laser, uncooled, InGaAlAs, Ethernet, 40 Gbps, 100 Gbps, 
 Summary | Full Text:PDF
Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 943-948
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
heterojunction bipolar transistor, reliability, rapid thermal annealing, GaAs, InGaP, 
 Summary | Full Text:PDF