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IEICE Trans

Shingo NISHIGAKI

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
Akio OHTA Yuta GOTO Shingo NISHIGAKI Guobin WEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 879-884
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memory (ReRAM), Si oxide, RF sputtering, Pt electrodes, resistance switching, 
 Summary | Full Text:PDF