Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

Akio OHTA  Yuta GOTO  Shingo NISHIGAKI  Guobin WEI  Hideki MURAKAMI  Seiichiro HIGASHI  Seiichi MIYAZAKI  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.5   pp.879-884
Publication Date: 2012/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.879
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
resistive random access memory (ReRAM),  Si oxide,  RF sputtering,  Pt electrodes,  resistance switching,  

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We have studied resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes. By sweeping bias to the top Pt electrode, non-polar type resistance switching was observed after a forming process. In comparison to RF sputtered TiOx case, significant small current levels were obtained in both the high resistance state (HRS) and the low resistance state (LRS). And, even with decreasing SiOx thickness down to 8 nm from 40 nm, the ON/OFF ratio in resistance-switching between HRS and LRS as large as 103 was maintained. From the analysis of current-voltage characteristics for Pt/SiOx on p-type Si(100) and n-type Si(100), it is suggested that the red-ox (REDction and OXidation) reaction induced by electron fluence near the Pt/SiOx interface is of importance for obtaining the resistance-switching behavior.