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IEICE Trans

Ryoichi MATSUMOTO

Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory
Tomiyuki ARAKAWA Ryoichi MATSUMOTO Takahisa HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 819-824
Type of Manuscript:  Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Nonvolatile memories
Keyword: 
flash memory, oxynitride tunnel film, endurance, disturbance, retention, 
 Summary | Full Text:PDF