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IEICE Trans

Riichirou SHIROTA

New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics
Tetsuo ENDOH Hirohisa IIZUKA Riichirou SHIROTA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10  pp. 1317-1323
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memory, read disturb characteristics, write/erase operation, stress leakage current, 
 Summary | Full Text:PDF