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IEICE Trans

Noriyuki WATANABE

Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density
Minoru IDA Kenji KURISHIMA Noriyuki WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1923-1928
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
heterojunction bipolar transistor (HBT), indium phosphide, graded base, 
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