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Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C
No. 8
pp. 1310-1316
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword:
InP, InGaAs, HBT, turn-on voltage, | | | Summary | Full Text:PDF | |
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Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method
Minoru IDA Masashi NAKATSUGAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C
No. 6
pp. 882-885
Type of Manuscript:
Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword:
power amplifier, load-pull measurement, on-wafer, MMIC, HEMT, | | | Summary | Full Text:PDF | |
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