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IEICE Trans

Norikazu ITO

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si
Taketoshi TANAKA Norikazu ITO Shinya TAKADO Masaaki KUZUHARA Ken NAKAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2020/04/01
Vol. E103-C  No. 4  pp. 186-190
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
AlGaN/GaN HFETs, deep donor, deep acceptor, GaN, semi-insulating, 
 Summary | Full Text:PDF