Keyword : AlGaN/GaN HFETs

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si
Taketoshi TANAKA Norikazu ITO Shinya TAKADO Masaaki KUZUHARA Ken NAKAHARA 
Publication:   
Publication Date: 2020/04/01
Vol. E103-C  No. 4 ; pp. 186-190
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
AlGaN/GaN HFETs, deep donor, deep acceptor, GaN, semi-insulating, 
 Summary | Full Text:PDF
Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
Tadayoshi DEGUCHI Hideshi TOMITA Atsushi KAMADA Manabu ARAI Kimiyoshi YAMASAKI Takashi EGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1343-1347
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETs, current collapse, field plate, on-resistance, 
 Summary | Full Text:PDF
Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage
Masaya OKADA Ryohei TAKAKI Daigo KIKUTA Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1042-1046
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HFETs, threshold voltage, temperature coefficient, illumination, buffer layer, 
 Summary | Full Text:PDF