Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2009/04/01
Vol. E92-C
No. 4
pp. 401-408
Type of Manuscript:
Special Section PAPER (Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era) Category: Keyword: dual value logic, leakage current, pass-transistor logic gate, standard cell, transmission gate, |